| Кількість | Ціна |
|---|---|
| 1+ | 936.60 грн |
| 10+ | 811.36 грн |
| 25+ | 704.83 грн |
| 100+ | 609.67 грн |
| 250+ | 590.64 грн |
| 750+ | 560.34 грн |
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Технічний опис IPQC60R017S7XTMA1 Infineon Technologies
Description: MOSFET, Mounting Type: Surface Mount, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 12V, Supplier Device Package: PG-HDSOP-22, Vgs(th) (Max) @ Id: 4.5V @ 1.89mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції IPQC60R017S7XTMA1 за ціною від 674.35 грн до 944.38 грн
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IPQC60R017S7XTMA1 | Infineon Technologies |
 Description: MOSFETInput Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 4.5V @ 1.89mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) |
на замовлення 731 шт: термін постачання 21-31 дні (днів) |
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| IPQC60R017S7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
на замовлення 731 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 944.38 грн |
| 10+ | 798.84 грн |
| 100+ | 674.35 грн |