IPQC60T010S7AXTMA1 INFINEON
Виробник: INFINEONDescription: INFINEON - IPQC60T010S7AXTMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 174 A, 0.01 ohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 174A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 694W
Bauform - Transistor: HDSOP
Anzahl der Pins: 22Pin(s)
Produktpalette: CoolMOS SJ S7A Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.01ohm
SVHC: No SVHC (27-Jun-2024)
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2297.23 грн |
| 5+ | 1857.65 грн |
| 10+ | 1586.57 грн |
| 50+ | 1387.07 грн |
| 100+ | 1191.76 грн |
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Технічний опис IPQC60T010S7AXTMA1 INFINEON
Description: INFINEON - IPQC60T010S7AXTMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 174 A, 0.01 ohm, HDSOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 174A, hazardous: false, rohsPhthalatesCompliant: TBA, Qualifikation: AEC-Q101, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4.5V, euEccn: NLR, Verlustleistung: 694W, Bauform - Transistor: HDSOP, Anzahl der Pins: 22Pin(s), Produktpalette: CoolMOS SJ S7A Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 12V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.01ohm, SVHC: No SVHC (27-Jun-2024).
Інші пропозиції IPQC60T010S7AXTMA1
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IPQC60T010S7AXTMA1 | Виробник : Infineon Technologies |
Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.06mA Supplier Device Package: PG-HDSOP-22-101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V Qualification: AEC-Q101 |
товару немає в наявності |
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IPQC60T010S7AXTMA1 | Виробник : Infineon Technologies |
Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.06mA Supplier Device Package: PG-HDSOP-22-101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V Qualification: AEC-Q101 |
товару немає в наявності |