IPQC60T010S7XTMA1 Infineon Technologies

Description: HIGH POWER_NEW, Drive Voltage (Max Rds On, Min Rds On): 12V, Supplier Device Package: PG-HDSOP-22-101, Vgs(th) (Max) @ Id: 4.5V @ 3.06mA, Power Dissipation (Max): 694W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V, Current - Continuous Drain (Id) @ 25°C: 174A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V.