IPQC60T022S7XTMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 863.45 грн |
| 10+ | 578.20 грн |
| 100+ | 435.44 грн |
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Технічний опис IPQC60T022S7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.43mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V.
Інші пропозиції IPQC60T022S7XTMA1
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IPQC60T022S7XTMA1 | Виробник : Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V |
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