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IPS105N03LGAKMA1

IPS105N03LGAKMA1 Infineon Technologies

IP%28D%2CF%2CS%2CU%29105N03L%20G.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 35A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1598+14.20 грн
Мінімальне замовлення: 1598
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Технічний опис IPS105N03LGAKMA1 Infineon Technologies

Description: MOSFET N-CH 30V 35A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO251-3-11, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 38W (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.

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IPS105N03LGAKMA1 IPS105N03LGAKMA1 Виробник : Infineon Technologies IP%28D%2CF%2CS%2CU%29105N03L%20G.pdf Description: MOSFET N-CH 30V 35A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.