IPS60R1K0CEAKMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 1039+ | 20.91 грн |
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Технічний опис IPS60R1K0CEAKMA1 Infineon Technologies
Description: CONSUMER, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 3.5V @ 130µA, Power Dissipation (Max): 61W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.
Інші пропозиції IPS60R1K0CEAKMA1 за ціною від 21.25 грн до 66.49 грн
| Фото | Назва | Виробник | Інформація |
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| IPS60R1K0CEAKMA1 | Виробник : Infineon Technologies |
MOSFET CONSUMER |
на замовлення 1499 шт: термін постачання 21-30 дні (днів) |
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| IPS60R1K0CEAKMA1 | Виробник : Infineon Technologies |
Description: CONSUMER Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |