| Кількість | Ціна |
|---|---|
| 6+ | 55.60 грн |
| 10+ | 48.15 грн |
| 100+ | 32.05 грн |
| 500+ | 25.36 грн |
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Технічний опис IPS60R2K1CEAKMA1 Infineon Technologies
Description: CONSUMER, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 3.5V @ 60µA, Power Dissipation (Max): 38W (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції IPS60R2K1CEAKMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IPS60R2K1CEAKMA1 | Виробник : Infineon Technologies |
 Description: CONSUMERInput Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
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