IPS60R400CEAKMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
| Кількість | Ціна |
|---|---|
| 405+ | 49.09 грн |
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Технічний опис IPS60R400CEAKMA1 Infineon Technologies
Description: CONSUMER, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj), Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V, Power Dissipation (Max): 112W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 300µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V.
Інші пропозиції IPS60R400CEAKMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IPS60R400CEAKMA1 | Виробник : Infineon Technologies |
MOSFET CONSUMER |
на замовлення 1480 шт: термін постачання 21-30 дні (днів) |
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IPS60R400CEAKMA1 | Виробник : Infineon Technologies |
Description: CONSUMER Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 300µA Power Dissipation (Max): 112W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |