IPS70R600CEAKMA1 Infineon Technologies

Description: MOSFET N-CH 700V 10.5A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO251-3-11, Vgs(th) (Max) @ Id: 3.5V @ 210µA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.