IPS80R600P7AKMA1 Infineon Technologies

Description: MOSFET N-CH 800V 8A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO251-3-342, Vgs(th) (Max) @ Id: 3.5V @ 170µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Bulk.