IPSA70R1K4P7SAKMA1 Infineon Technologies

Description: MOSFET N-CH 700V 4A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 400 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 3.5V @ 40µA, Power Dissipation (Max): 22.7W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.