IPSA70R600P7SAKMA1 Infineon Technologies

Description: MOSFET N-CH 700V 8.5A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V, Power Dissipation (Max): 43.1W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: PG-TO251-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V, Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V.