| Кількість | Ціна |
|---|---|
| 1+ | 368.39 грн |
| 10+ | 241.54 грн |
| 100+ | 149.42 грн |
| 500+ | 131.80 грн |
| 2000+ | 123.34 грн |
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Технічний опис IPT012N06NATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 240A 8HSOF, Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-HSOF-8-1, Vgs(th) (Max) @ Id: 3.3V @ 143µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Інші пропозиції IPT012N06NATMA1 за ціною від 189.71 грн до 501.13 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPT012N06NATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 60V 240A 8HSOFInput Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-HSOF-8-1 Vgs(th) (Max) @ Id: 3.3V @ 143µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 1330 шт: термін постачання 21-31 дні (днів) |
|
| IPT012N06NATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 240A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 240A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 1330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 501.13 грн |
| 10+ | 325.28 грн |
| 100+ | 236.24 грн |
| 500+ | 189.71 грн |