IPT015N10NF2SATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 1800+ | 164.60 грн |
| 3600+ | 150.08 грн |
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Технічний опис IPT015N10NF2SATMA1 Infineon Technologies
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 315A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 267µA, Supplier Device Package: PG-HSOF-8-10, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V.
Інші пропозиції IPT015N10NF2SATMA1 за ціною від 121.93 грн до 467.04 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPT015N10NF2SATMA1 | Infineon Technologies |
MOSFETs IFX FET >80 - 100V |
на замовлення 1164 шт: термін постачання 21-30 дні (днів) |
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IPT015N10NF2SATMA1 | Infineon Technologies |
Description: MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 315A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-HSOF-8-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V |
на замовлення 6753 шт: термін постачання 21-31 дні (днів) |
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| IPT015N10NF2SATMA1 |
|
Виробник: Infineon Technologies
MOSFETs IFX FET >80 - 100V
MOSFETs IFX FET >80 - 100V
на замовлення 1164 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 399.64 грн |
| 10+ | 257.75 грн |
| 100+ | 167.04 грн |
| 500+ | 140.26 грн |
| 1000+ | 129.69 грн |
| 1800+ | 121.93 грн |
| IPT015N10NF2SATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
на замовлення 6753 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 467.04 грн |
| 10+ | 299.62 грн |
| 100+ | 214.70 грн |
| 500+ | 167.52 грн |