IPT017N10NM5LF2ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IPT017N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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Технічний опис IPT017N10NM5LF2ATMA1 Infineon Technologies
Description: IPT017N10NM5LF2ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V, Power Dissipation (Max): 3.8W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 280µA, Supplier Device Package: PG-HSOF-8-1, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V.
Інші пропозиції IPT017N10NM5LF2ATMA1 за ціною від 169.13 грн до 488.88 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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IPT017N10NM5LF2ATMA1 | Infineon Technologies |
Description: IPT017N10NM5LF2ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 280µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V |
на замовлення 2901 шт: термін постачання 21-31 дні (днів) |
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IPT017N10NM5LF2ATMA1 | Infineon Technologies |
MOSFETs IFX FET >80 - 100V |
на замовлення 192 шт: термін постачання 21-30 дні (днів) |
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| IPT017N10NM5LF2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 100V; 321A; 375W; PG-HSOF-8 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 100V Drain current: 321A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: 20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 206nC Kind of channel: enhancement |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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| IPT017N10NM5LF2ATMA1 |
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Виробник: Infineon Technologies
Description: IPT017N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Description: IPT017N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 2901 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 414.72 грн |
| 10+ | 267.96 грн |
| 100+ | 193.57 грн |
| 500+ | 181.03 грн |
| IPT017N10NM5LF2ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs IFX FET >80 - 100V
MOSFETs IFX FET >80 - 100V
на замовлення 192 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 488.88 грн |
| 10+ | 319.14 грн |
| 100+ | 202.96 грн |
| 500+ | 184.32 грн |
| 1000+ | 169.13 грн |
| IPT017N10NM5LF2ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 321A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 321A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 206nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 321A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 321A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 206nC
Kind of channel: enhancement
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 255.94 грн |