IPT020N13NM6ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V
на замовлення 1392 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 415.19 грн |
| 10+ | 267.44 грн |
| 100+ | 192.57 грн |
| 500+ | 178.03 грн |
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Технічний опис IPT020N13NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc), Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 275µA, Supplier Device Package: PG-HSOF-8-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 135 V, Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V.
Інші пропозиції IPT020N13NM6ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IPT020N13NM6ATMA1 | Виробник : Infineon Technologies |
TRENCH >=100V |
товару немає в наявності |
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IPT020N13NM6ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 297A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 142A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 68 V |
товару немає в наявності |
|
 |
IPT020N13NM6ATMA1 | Виробник : Infineon Technologies |
MOSFETs TRENCH >=100V |
товару немає в наявності |