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Технічний опис IPT029N08N5ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 52A/169A HSOF-8, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-HSOF-8-1, Vgs(th) (Max) @ Id: 3.8V @ 108µA, Power Dissipation (Max): 168W (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Інші пропозиції IPT029N08N5ATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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IPT029N08N5ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 80V 52A/169A HSOF-8Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-HSOF-8-1 Vgs(th) (Max) @ Id: 3.8V @ 108µA Power Dissipation (Max): 168W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
|
|
IPT029N08N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 52A/169A HSOF-8 Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-HSOF-8-1 Vgs(th) (Max) @ Id: 3.8V @ 108µA Power Dissipation (Max): 168W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| IPT029N08N5ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 52A/169A HSOF-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 168W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 52A/169A HSOF-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 168W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IPT029N08N5ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 52A/169A HSOF-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 168W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 52A/169A HSOF-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 168W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.