IPT054N15N5ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2000+ | 196.64 грн |
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Технічний опис IPT054N15N5ATMA1 Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 143A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 181µA, Supplier Device Package: PG-HSOF-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V.
Інші пропозиції IPT054N15N5ATMA1 за ціною від 180.26 грн до 440.85 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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IPT054N15N5ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V PG-HSOF-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 181µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPT054N15N5ATMA1 | Виробник : Infineon Technologies | MOSFET TRENCH >=100V |
на замовлення 1995 шт: термін постачання 21-30 дні (днів) |
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IPT054N15N5ATMA1 | Виробник : Infineon Technologies | N Channel Power Mosfet |
товар відсутній |
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IPT054N15N5ATMA1 | Виробник : Infineon Technologies | N Channel Power Mosfet |
товар відсутній |