IPT111N20NFDATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 96A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 267µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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Технічний опис IPT111N20NFDATMA1 Infineon Technologies
Description: MOSFET N-CH 200V 96A 8HSOF, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-HSOF-8-1, Vgs(th) (Max) @ Id: 4V @ 267µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Інші пропозиції IPT111N20NFDATMA1 за ціною від 239.70 грн до 638.92 грн
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IPT111N20NFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 96A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 267µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V |
на замовлення 3878 шт: термін постачання 21-31 дні (днів) |
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IPT111N20NFDATMA1 | Infineon Technologies |
MOSFETs N |
на замовлення 2263 шт: термін постачання 21-30 дні (днів) |
|
| IPT111N20NFDATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 96A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Description: MOSFET N-CH 200V 96A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
на замовлення 3878 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 524.13 грн |
| 10+ | 358.95 грн |
| 100+ | 262.76 грн |
| 500+ | 239.70 грн |
| IPT111N20NFDATMA1 |
|
Виробник: Infineon Technologies
MOSFETs N
MOSFETs N
на замовлення 2263 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 638.92 грн |
| 10+ | 446.61 грн |
| 100+ | 286.86 грн |
| 500+ | 267.83 грн |