IPT60R080G7XTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 29A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
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Технічний опис IPT60R080G7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 29A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 490µA, Supplier Device Package: PG-HSOF-8-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V.
Інші пропозиції IPT60R080G7XTMA1 за ціною від 189.21 грн до 497.05 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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IPT60R080G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 29A 8HSOF Part Status: Active Supplier Device Package: PG-HSOF-8-2 Vgs(th) (Max) @ Id: 4V @ 490µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
на замовлення 5341 шт: термін постачання 21-31 дні (днів) |
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IPT60R080G7XTMA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
на замовлення 1735 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| IPT60R080G7XTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 29A 8HSOF
Part Status: Active
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 600V 29A 8HSOF
Part Status: Active
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4V @ 490µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 5341 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 497.05 грн |
| 10+ | 323.15 грн |
| 100+ | 234.93 грн |
| 500+ | 189.21 грн |
| IPT60R080G7XTMA1 |
|
Виробник: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
на замовлення 1735 шт:
термін постачання 21-30 дні (днів)