IPT60R099CM8XTMA1 Infineon Technologies
на замовлення 1306 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 297.05 грн |
| 10+ | 191.42 грн |
| 100+ | 123.13 грн |
| 500+ | 109.45 грн |
| 1000+ | 93.49 грн |
| 2000+ | 88.17 грн |
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Технічний опис IPT60R099CM8XTMA1 Infineon Technologies
Description: IPT60R099CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V, Power Dissipation (Max): 186W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 260µA, Supplier Device Package: PG-HSOF-8-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V.
Інші пропозиції IPT60R099CM8XTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IPT60R099CM8XTMA1 | Виробник : Infineon Technologies |
 Description: IPT60R099CM8XTMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 260µA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V |
товару немає в наявності |
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IPT60R099CM8XTMA1 | Виробник : Infineon Technologies |
Description: IPT60R099CM8XTMA1 Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 260µA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V |
товару немає в наявності |