IPT60R120CM8XTMA1 Infineon Technologies

Description: IPT60R120CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V, Power Dissipation (Max): 154W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 200µA, Supplier Device Package: PG-HSOF-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V.