| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 418.81 грн |
| 10+ | 304.85 грн |
| 25+ | 249.90 грн |
| 100+ | 195.37 грн |
| 250+ | 194.68 грн |
| 500+ | 164.30 грн |
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Технічний опис IPT60T065S7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 12V, Supplier Device Package: PG-HSOF-8-2, Vgs(th) (Max) @ Id: 4.5V @ 470µA, Power Dissipation (Max): 167W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Інші пропозиції IPT60T065S7XTMA1 за ціною від 160.17 грн до 439.57 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPT60T065S7XTMA1 | Infineon Technologies |
 Description: HIGH POWER_NEWInput Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: PG-HSOF-8-2 Vgs(th) (Max) @ Id: 4.5V @ 470µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 1930 шт: термін постачання 21-31 дні (днів) |
|
| IPT60T065S7XTMA1 |
|
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 439.57 грн |
| 10+ | 283.59 грн |
| 100+ | 204.49 грн |
| 500+ | 160.28 грн |
| 1000+ | 160.17 грн |