IPT65R018CM8XTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IPT65R018CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
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Технічний опис IPT65R018CM8XTMA1 Infineon Technologies
Description: IPT65R018CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 134A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 1.48mA, Supplier Device Package: PG-HSOF-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V.
Інші пропозиції IPT65R018CM8XTMA1 за ціною від 526.52 грн до 1062.53 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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IPT65R018CM8XTMA1 | Infineon Technologies |
Description: IPT65R018CM8XTMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 134A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 1.48mA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPT65R018CM8XTMA1 | Infineon Technologies |
MOSFETs 650V CoolMOS CM8 Power Transistor |
на замовлення 1494 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| IPT65R018CM8XTMA1 |
|
Виробник: Infineon Technologies
Description: IPT65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
Description: IPT65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1062.53 грн |
| 10+ | 717.29 грн |
| 50+ | 594.71 грн |
| 500+ | 526.52 грн |
| IPT65R018CM8XTMA1 |
|
Виробник: Infineon Technologies
MOSFETs 650V CoolMOS CM8 Power Transistor
MOSFETs 650V CoolMOS CM8 Power Transistor
на замовлення 1494 шт:
термін постачання 21-30 дні (днів)