на замовлення 149 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 190.54 грн |
| 10+ | 132.83 грн |
| 100+ | 87.55 грн |
| 250+ | 76.51 грн |
| 500+ | 75.04 грн |
| 2000+ | 62.83 грн |
Відгуки про товар
Написати відгук
Технічний опис IPTA60R180CM8XTMA1 Infineon Technologies
Description: IPTA60R180CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: 4-PowerLSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tj), Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 140µA, Supplier Device Package: PG-LHSOF-4-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V.
Інші пропозиції IPTA60R180CM8XTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IPTA60R180CM8XTMA1 | Виробник : Infineon Technologies |
Description: IPTA60R180CM8XTMA1 Packaging: Tape & Reel (TR) Package / Case: 4-PowerLSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tj) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 140µA Supplier Device Package: PG-LHSOF-4-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V |
товару немає в наявності |
|
|
|
IPTA60R180CM8XTMA1 | Виробник : Infineon Technologies |
Description: IPTA60R180CM8XTMA1 Packaging: Cut Tape (CT) Package / Case: 4-PowerLSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tj) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 140µA Supplier Device Package: PG-LHSOF-4-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V |
товару немає в наявності |