IPTC007N06NM5ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HDSOP-16-U01
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
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Технічний опис IPTC007N06NM5ATMA1 Infineon Technologies
Description: INFINEON - IPTC007N06NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 454 A, 750 µohm, HDSOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 454A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 3.3V, Verlustleistung: 375W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: HDSOP, Anzahl der Pins: 16Pin(s), Produktpalette: OptiMOS 5 Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 750µohm.
Інші пропозиції IPTC007N06NM5ATMA1 за ціною від 168.25 грн до 429.53 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPTC007N06NM5ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 454A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 280µA Supplier Device Package: PG-HDSOP-16-U01 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V |
на замовлення 2434 шт: термін постачання 21-31 дні (днів) |
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IPTC007N06NM5ATMA1 | Infineon Technologies |
MOSFETs TRENCH 40<-<100V |
на замовлення 1632 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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IPTC007N06NM5ATMA1 | INFINEON |
Description: INFINEON - IPTC007N06NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 454 A, 750 µohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 454A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 3.3V Verlustleistung: 375W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 750µohm |
на замовлення 1211 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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IPTC007N06NM5ATMA1 | INFINEON |
Description: INFINEON - IPTC007N06NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 454 A, 750 µohm, HDSOP, Oberflächenmontage Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 454A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 3.3V Verlustleistung: 375W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: OptiMOS 5 Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 750µohm |
на замовлення 1211 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| IPTC007N06NM5ATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HDSOP-16-U01
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HDSOP-16-U01
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
на замовлення 2434 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 429.53 грн |
| 10+ | 275.95 грн |
| 50+ | 216.83 грн |
| 100+ | 185.64 грн |
| 500+ | 168.25 грн |
| IPTC007N06NM5ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs TRENCH 40<-<100V
MOSFETs TRENCH 40<-<100V
на замовлення 1632 шт:
термін постачання 21-30 дні (днів)
| IPTC007N06NM5ATMA1 |
|
Виробник: INFINEON
Description: INFINEON - IPTC007N06NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 454 A, 750 µohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 454A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3.3V
Verlustleistung: 375W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 750µohm
Description: INFINEON - IPTC007N06NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 454 A, 750 µohm, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 454A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3.3V
Verlustleistung: 375W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 750µohm
на замовлення 1211 шт:
термін постачання 21-31 дні (днів)
| IPTC007N06NM5ATMA1 |
|
Виробник: INFINEON
Description: INFINEON - IPTC007N06NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 454 A, 750 µohm, HDSOP, Oberflächenmontage
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 454A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 3.3V
Verlustleistung: 375W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 750µohm
Description: INFINEON - IPTC007N06NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 454 A, 750 µohm, HDSOP, Oberflächenmontage
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 454A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 3.3V
Verlustleistung: 375W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 750µohm
на замовлення 1211 шт:
термін постачання 21-31 дні (днів)