на замовлення 2133 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 807.66 грн |
| 10+ | 651.45 грн |
| 25+ | 511.30 грн |
| 100+ | 453.92 грн |
| 250+ | 429.64 грн |
| 500+ | 410.51 грн |
| 1000+ | 393.59 грн |
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Технічний опис IPTC025N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 4V @ 275µA, Supplier Device Package: PG-HDSOP-16-2, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V.
Інші пропозиції IPTC025N15NM6ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IPTC025N15NM6ATMA1 | Виробник : Infineon Technologies |
 IPTC025N15NM6ATMA1 |
товару немає в наявності |
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IPTC025N15NM6ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V |
товару немає в наявності |
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IPTC025N15NM6ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V |
товару немає в наявності |