IPTC034N15NM6ATMA1 Infineon Technologies
Виробник: Infineon Technologies
MOSFETs OptiMOS 6 power MOSFET 150 V normal level in TOLT package for top-side cooling
| Кількість | Ціна |
|---|---|
| 2+ | 323.71 грн |
| 10+ | 255.91 грн |
| 100+ | 180.11 грн |
| 500+ | 159.94 грн |
| 1000+ | 137.00 грн |
| 1800+ | 129.35 грн |
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Технічний опис IPTC034N15NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V, Power Dissipation (Max): 3.8W (Ta), 294W (Tc), Vgs(th) (Max) @ Id: 4V @ 179µA, Supplier Device Package: PG-HDSOP-16-2, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V.
Інші пропозиції IPTC034N15NM6ATMA1 за ціною від 152.52 грн до 390.38 грн
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IPTC034N15NM6ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V Power Dissipation (Max): 3.8W (Ta), 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 179µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V |
на замовлення 674 шт: термін постачання 21-31 дні (днів) |
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IPTC034N15NM6ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V Power Dissipation (Max): 3.8W (Ta), 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 179µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V |
товару немає в наявності |