IPTG007N06NM5ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
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Технічний опис IPTG007N06NM5ATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 53A/454A HSOG-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc), Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V, Power Dissipation (Max): 3.8W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 280µA, Supplier Device Package: PG-HSOG-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V.
Інші пропозиції IPTG007N06NM5ATMA1 за ціною від 203.69 грн до 499.96 грн
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IPTG007N06NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 53A/454A HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 280µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V |
на замовлення 2535 шт: термін постачання 21-31 дні (днів) |
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IPTG007N06NM5ATMA1 | Infineon Technologies |
MOSFETs TRENCH 40<-<100V |
на замовлення 5038 шт: термін постачання 21-30 дні (днів) |
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| IPTG007N06NM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
на замовлення 2535 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 487.65 грн |
| 10+ | 313.29 грн |
| 100+ | 256.50 грн |
| IPTG007N06NM5ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs TRENCH 40<-<100V
MOSFETs TRENCH 40<-<100V
на замовлення 5038 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 499.96 грн |
| 10+ | 329.89 грн |
| 100+ | 238.23 грн |
| 500+ | 227.66 грн |
| 1000+ | 203.69 грн |