Технічний опис IPTG025N10NM5ATMA1 Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 206A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V, Power Dissipation (Max): 3.8W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 158µA, Supplier Device Package: PG-HSOG-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V.
Інші пропозиції IPTG025N10NM5ATMA1
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IPTG025N10NM5ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 206A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 158µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V |
товару немає в наявності |
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IPTG025N10NM5ATMA1 | Виробник : Infineon Technologies |
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товару немає в наявності |