IPTG029N13NM6ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
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Технічний опис IPTG029N13NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V, Power Dissipation (Max): 3.8W (Ta), 294W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 179µA, Supplier Device Package: PG-HSOG-8-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 135 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V.
Інші пропозиції IPTG029N13NM6ATMA1 за ціною від 210.58 грн до 495.94 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPTG029N13NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V Power Dissipation (Max): 3.8W (Ta), 294W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 179µA Supplier Device Package: PG-HSOG-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IPTG029N13NM6ATMA1 | Infineon Technologies |
MOSFETs IFX FET >100-150V |
на замовлення 1695 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| IPTG029N13NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 495.94 грн |
| 10+ | 322.44 грн |
| 100+ | 234.64 грн |
| 500+ | 210.58 грн |
| IPTG029N13NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs IFX FET >100-150V
MOSFETs IFX FET >100-150V
на замовлення 1695 шт:
термін постачання 21-30 дні (днів)



