IPTG044N15NM5ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-HSOG-8
Vgs(th) (Max) @ Id: 4.6V @ 235µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис IPTG044N15NM5ATMA1 Infineon Technologies
Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Part Status: Active, Supplier Device Package: PG-HSOG-8, Vgs(th) (Max) @ Id: 4.6V @ 235µA, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Gull Wing, Packaging: Tape & Reel (TR).
Інші пропозиції IPTG044N15NM5ATMA1 за ціною від 155.77 грн до 445.63 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPTG044N15NM5ATMA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
на замовлення 1120 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
IPTG044N15NM5ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 235µA Supplier Device Package: PG-HSOG-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V |
на замовлення 1887 шт: термін постачання 21-31 дні (днів) |
|
| IPTG044N15NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
на замовлення 1120 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 439.11 грн |
| 10+ | 290.18 грн |
| 100+ | 202.99 грн |
| 500+ | 183.25 грн |
| 1000+ | 182.55 грн |
| 1800+ | 155.77 грн |
| IPTG044N15NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 235µA
Supplier Device Package: PG-HSOG-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 235µA
Supplier Device Package: PG-HSOG-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 75 V
на замовлення 1887 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 445.63 грн |
| 10+ | 287.33 грн |
| 100+ | 207.14 грн |
| 500+ | 162.32 грн |



