IPTG054N15NM5ATMA1 Infineon Technologies

Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Part Status: Active, Supplier Device Package: PG-HSOG-8, Vgs(th) (Max) @ Id: 4.6V @ 191µA, Power Dissipation (Max): 3.8W (Ta), 250W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 143A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Gull Wing, Packaging: Tape & Reel (TR).