IPTG210N25NM3FDATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Відгуки про товар
Написати відгук
Технічний опис IPTG210N25NM3FDATMA1 Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V, Power Dissipation (Max): 3.8W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 267µA, Supplier Device Package: PG-HSOG-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V.
Інші пропозиції IPTG210N25NM3FDATMA1 за ціною від 269.45 грн до 655.37 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPTG210N25NM3FDATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 267µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
IPTG210N25NM3FDATMA1 | Infineon Technologies |
MOSFET TRENCH >=100V |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
|
| IPTG210N25NM3FDATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 556.64 грн |
| 10+ | 382.16 грн |
| 100+ | 291.43 грн |
| 500+ | 269.45 грн |
| IPTG210N25NM3FDATMA1 |
|
Виробник: Infineon Technologies
MOSFET TRENCH >=100V
MOSFET TRENCH >=100V
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 655.37 грн |
| 10+ | 553.61 грн |
| 100+ | 401.05 грн |
| 250+ | 388.36 грн |
| 500+ | 353.82 грн |
| 1000+ | 318.58 грн |