Технічний опис IPU60R1K5CEBKMA1 Infineon Technologies
Description: MOSFET N-CH 600V 3.1A TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: TO-251, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V.
Інші пропозиції IPU60R1K5CEBKMA1 за ціною від 26.43 грн до 26.43 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
|---|---|---|---|---|---|---|---|---|---|
| IPU60R1K5CEBKMA1 | Виробник : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - IPU60R1K5CEBKMA1 - IPU60R1K5 - 600V COOLMOS N-CHANNEL POWERtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
на замовлення 8500 шт: термін постачання 21-31 дні (днів) |
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IPU60R1K5CEBKMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 3.1A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: TO-251 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V |
товару немає в наявності |