IPU60R2K0C6AKMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22.3W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1154+ | 19.43 грн |
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Технічний опис IPU60R2K0C6AKMA1 Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 3.5V @ 60µA, Power Dissipation (Max): 22.3W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції IPU60R2K0C6AKMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IPU60R2K0C6AKMA1 | Виробник : Infineon Technologies |
MOSFET |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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IPU60R2K0C6AKMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 2.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Power Dissipation (Max): 22.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V |
товару немає в наявності |