IPU80R1K0CEAKMA1 Infineon Technologies

Description: MOSFET N-CH 800V 5.7A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO251-3-341, Vgs(th) (Max) @ Id: 3.9V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.