IPU80R1K4CEBKMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 18925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 682+ | 30.79 грн |
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Технічний опис IPU80R1K4CEBKMA1 Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 240µA, Supplier Device Package: PG-TO251-3, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V.
Інші пропозиції IPU80R1K4CEBKMA1 за ціною від 30.29 грн до 30.29 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
|---|---|---|---|---|---|---|---|---|---|
| IPU80R1K4CEBKMA1 | Виробник : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPU80R1K4CEBKMA1 - IPU80R1K4 - 800V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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IPU80R1K4CEBKMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-251 Tube |
товару немає в наявності |
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IPU80R1K4CEBKMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 800V 3.9A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V |
товару немає в наявності |