| Кількість | Ціна |
|---|---|
| 5+ | 65.03 грн |
| 10+ | 55.04 грн |
| 100+ | 31.91 грн |
| 500+ | 26.75 грн |
| 1000+ | 25.01 грн |
| 1500+ | 20.41 грн |
| 4500+ | 19.44 грн |
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Технічний опис IPU80R3K3P7AKMA1 Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V.
Інші пропозиції IPU80R3K3P7AKMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IPU80R3K3P7AKMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 800V 1.9A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V |
товару немає в наявності |