IPU95R2K0P7AKMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
| Кількість | Ціна |
|---|---|
| 405+ | 50.10 грн |
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Технічний опис IPU95R2K0P7AKMA1 Infineon Technologies
Description: MOSFET N-CH 950V 4A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 3.5V @ 80µA, Power Dissipation (Max): 37W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції IPU95R2K0P7AKMA1 за ціною від 39.92 грн до 110.55 грн
| Фото | Назва | Виробник | Інформація |
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IPU95R2K0P7AKMA1 | Виробник : Infineon Technologies |
MOSFET LOW POWER_NEW |
на замовлення 3000 шт: термін постачання 621-630 дні (днів) |
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IPU95R2K0P7AKMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 950V 4A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 80µA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |