IPW50R190CE Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Power Dissipation (Max): 152W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V, Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 13V, Part Status: Active, Supplier Device Package: PG-TO247-3-41, Vgs(th) (Max) @ Id: 3.5V @ 510µA.