Технічний опис IPW60R037CSFDXKSA1 Infineon Technologies
Description: MOSFET N CH, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.63mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V.
Інші пропозиції IPW60R037CSFDXKSA1 за ціною від 303.54 грн до 724.44 грн
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IPW60R037CSFDXKSA1 | Infineon Technologies |
 Description: MOSFET N CHPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.63mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V |
на замовлення 236 шт: термін постачання 21-31 дні (днів) |
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IPW60R037CSFDXKSA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
на замовлення 187 шт: термін постачання 21-30 дні (днів) |
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| IPW60R037CSFDXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
на замовлення 236 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 631.96 грн |
| 30+ | 358.42 грн |
| 120+ | 303.54 грн |
| IPW60R037CSFDXKSA1 |
|
Виробник: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
на замовлення 187 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 724.44 грн |
| 10+ | 435.27 грн |
| 100+ | 320.70 грн |
| 480+ | 313.65 грн |