IPW60R120CM8XKSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 2+ | 277.94 грн |
| 10+ | 150.76 грн |
| 100+ | 107.84 грн |
| 480+ | 107.13 грн |
| 1200+ | 100.09 грн |
| 2640+ | 95.86 грн |
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Технічний опис IPW60R120CM8XKSA1 Infineon Technologies
Description: IPW60R120CM8XKSA1, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V, Power Dissipation (Max): 131W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 200µA, Supplier Device Package: PG-TO247-3-U06, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V.
Інші пропозиції IPW60R120CM8XKSA1 за ціною від 126.73 грн до 291.80 грн
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IPW60R120CM8XKSA1 | Infineon Technologies |
 Description: IPW60R120CM8XKSA1Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 200µA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V |
на замовлення 184 шт: термін постачання 21-31 дні (днів) |
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| IPW60R120CM8XKSA1 |
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Виробник: Infineon Technologies
Description: IPW60R120CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 200µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V
Description: IPW60R120CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 200µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 291.80 грн |
| 30+ | 154.62 грн |
| 120+ | 126.73 грн |