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Технічний опис IPW60R330P6 Infineon Technologies
Description: IPW60R330 - 600V COOLMOS N-CHANN, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V, Power Dissipation (Max): 93W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 370µA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V.
Інші пропозиції IPW60R330P6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IPW60R330P6 | Infineon Technologies |
Description: IPW60R330 - 600V COOLMOS N-CHANN Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 370µA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V |
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IPW60R330P6FKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 93W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IPW60R330P6 |
Виробник: Infineon Technologies
Description: IPW60R330 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Description: IPW60R330 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IPW60R330P6FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
товару немає в наявності
В кошику
од. на суму грн.