Технічний опис IPW65R018CFD7XKSA1 Infineon Technologies
Description: 650 V COOLMOS CFD7 SUPERJUNCTION, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.91mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V.
Інші пропозиції IPW65R018CFD7XKSA1 за ціною від 638.71 грн до 1236.18 грн
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IPW65R018CFD7XKSA1 | Infineon Technologies |
 Description: 650 V COOLMOS CFD7 SUPERJUNCTIONPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V |
на замовлення 497 шт: термін постачання 21-31 дні (днів) |
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Виробник: Infineon Technologies
Description: 650 V COOLMOS CFD7 SUPERJUNCTION
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
Description: 650 V COOLMOS CFD7 SUPERJUNCTION
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1236.18 грн |
| 30+ | 737.75 грн |
| 120+ | 638.71 грн |