IPW65R022CFD7AXKSA1 Infineon Technologies
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1042.18 грн |
| 25+ | 620.03 грн |
| 100+ | 503.26 грн |
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Технічний опис IPW65R022CFD7AXKSA1 Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO247-3, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3, Vgs(th) (Max) @ Id: 4.5V @ 2.91mA, Power Dissipation (Max): 446W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), FET Type: N-Channel.
Інші пропозиції IPW65R022CFD7AXKSA1 за ціною від 655.16 грн до 1221.64 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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IPW65R022CFD7AXKSA1 | Infineon Technologies |
 Description: AUTOMOTIVE_COOLMOS PG-TO247-3Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) FET Type: N-Channel |
на замовлення 242 шт: термін постачання 21-31 дні (днів) |
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| IPW65R022CFD7AXKSA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Description: AUTOMOTIVE_COOLMOS PG-TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
на замовлення 242 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1221.64 грн |
| 10+ | 835.00 грн |
| 240+ | 655.16 грн |