IPW65R041CFDFKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 650V 68.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.3mA
Supplier Device Package: PG-TO247-3-1
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 100 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
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Технічний опис IPW65R041CFDFKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 68.5A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3.3mA, Supplier Device Package: PG-TO247-3-1, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 100 V.
Інші пропозиції IPW65R041CFDFKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IPW65R041CFDFKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 700V 68.5A 3-Pin(3+Tab) TO-247 Tube |
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IPW65R041CFDFKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3 Mounting: THT Case: PG-TO247-3 Kind of package: tube Drain-source voltage: 650V Drain current: 68.5A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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IPW65R041CFDFKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 700V 68.5A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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IPW65R041CFDFKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 700V 68.5A 3-Pin(3+Tab) TO-247 Tube |
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IPW65R041CFDFKSA1 | Виробник : Infineon Technologies |
MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2 |
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IPW65R041CFDFKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3 Mounting: THT Case: PG-TO247-3 Kind of package: tube Drain-source voltage: 650V Drain current: 68.5A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |