IPW65R048CFDAFKSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 505.71 грн |
| 10+ | 493.62 грн |
| 25+ | 348.18 грн |
| 100+ | 343.95 грн |
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Технічний опис IPW65R048CFDAFKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 63.3A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63.3A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 29.4A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.9mA, Supplier Device Package: PG-TO247-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7440 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції IPW65R048CFDAFKSA1 за ціною від 369.93 грн до 760.42 грн
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IPW65R048CFDAFKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 650V 63.3A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63.3A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 29.4A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.9mA Supplier Device Package: PG-TO247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7440 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 236 шт: термін постачання 21-31 дні (днів) |
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| IPW65R048CFDAFKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 63.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63.3A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 29.4A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.9mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7440 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 63.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63.3A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 29.4A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.9mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7440 pF @ 100 V
Qualification: AEC-Q101
на замовлення 236 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 760.42 грн |
| 30+ | 435.10 грн |
| 120+ | 369.93 грн |