IPW65R080CFDFKSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 627.41 грн |
| 10+ | 489.57 грн |
| 25+ | 384.13 грн |
| 100+ | 340.43 грн |
| 240+ | 319.29 грн |
| 480+ | 304.48 грн |
| 1200+ | 292.50 грн |
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Технічний опис IPW65R080CFDFKSA1 Infineon Technologies
Description: MOSFET N-CH 700V 43.3A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V, Power Dissipation (Max): 391W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.76mA, Supplier Device Package: PG-TO247-3-1, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5030 pF @ 100 V.
Інші пропозиції IPW65R080CFDFKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IPW65R080CFDFKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 700V 43.3A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V Power Dissipation (Max): 391W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.76mA Supplier Device Package: PG-TO247-3-1 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5030 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3120 шт В кошику од. на суму грн. |
| IPW65R080CFDFKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 43.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
Supplier Device Package: PG-TO247-3-1
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5030 pF @ 100 V
Description: MOSFET N-CH 700V 43.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
Supplier Device Package: PG-TO247-3-1
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5030 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3120 шт
В кошику
од. на суму грн.