IPW65R110CFD7XKSA1 Infineon Technologies

Description: HIGH POWER_NEW, Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3, Vgs(th) (Max) @ Id: 4.5V @ 480µA, Power Dissipation (Max): 114W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.